• Raman peak shifts by applied magnetic field in InSb/AlxIn1−xSb superlattices

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Metadata

Document Title

Raman peak shifts by applied magnetic field in InSb/AlxIn1−xSb superlattices

Author

Chikumpa M., Zon, Thainoi S., Kiravittaya S., Tandaechanurat A., Nuntawong N., Sopitpan S., Yordsri V., Thanachayanont C., Kanjanachuchai S., Ratanathammaphan S., Panyakeow S.

Name from Authors Collection

Chikumpa M.

Scopus Author ID

57219777383

ORCID ID

NULL

|

Zon

Scopus Author ID

57190301976

ORCID ID

NULL

|

Thainoi S.

Scopus Author ID

6507769389

ORCID ID

NULL

|

Kiravittaya S.

Scopus Author ID

6601983415

ORCID ID

NULL

|

Tandaechanurat A.

Scopus Author ID

23394077200

ORCID ID

NULL

|

Noppadon Nuntawong

Scopus Author ID

13105491400

ORCID ID

0000-0002-3495-1184

|

Sopitpan S.

Scopus Author ID

6506053016

ORCID ID

NULL

|

Yordsri V.

Scopus Author ID

41562460900

ORCID ID

0000-0003-3484-5792

|

Chanchana Thanachayanont

Scopus Author ID

24167351300

ORCID ID

0000-0001-6456-1374

|

Kanjanachuchai S.

Scopus Author ID

6602637472

ORCID ID

NULL

|

Ratanathammaphan S.

Scopus Author ID

6506207669

ORCID ID

NULL

|

Panyakeow S.

Scopus Author ID

6701331922

ORCID ID

NULL

Affiliations

Semiconductor Devices Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, Thailand; Advanced Optical Technology Laboratory, Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok, Thailand; International School of Engineering (ISE), Faculty of Engineering, Chulalongkorn University, Bangkok, Thailand; National Science and Technology Development Agency (NSTDA), Pathumthani, 12120, Thailand

Type

Article

Source Title

Materials Research Express

ISSN

20531591

Year

2020

Volume

7

Issue

10

Open Access

Gold

Publisher

IOP Publishing Ltd

DOI

10.1088/2053-1591/abbded

Format

PDF

Abstract

InSb/Alxln1−xSb superlattices (SLs) are grown by molecular beam epitaxy on (001) InSb substrate and Raman scattering spectroscopy of the samples under magnetic field is investigated. Al contents in AlInSb of the samples are varied. All samples are characterized by atomic force microscopy (AFM), X-ray diffraction and Raman scattering spectroscopy. The Raman spectroscopy is done by using excitation laser with 633 nm wavelength and 2 μm beam spot under applied magnetic field from 0 to 170 mT. Both TO and LO Raman peaks from InSb are detected from all samples. There are Raman peak shift of both TO and LO by applied magnetic field. Stronger magnetic effect is found in LO than TO phonon modes. We attribute this effect to the symmetry breaking of the InSb/AlInSb interfaces since the observed roughness of the top InSb layer can qualitatively correlate with the shift. © 2020 The Author(s). Published by IOP Publishing Ltd

Industrial Classification

N/A

Knowledge Taxonomy Level 1

Physical sciences

Knowledge Taxonomy Level 2

Instruments and techniques

Knowledge Taxonomy Level 3

Physics of materials

Funding Sponsor

National Science and Technology Development Agency

License

N/A

Rights

N/A

Publication Source

Scopus

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