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Ultrasonic-Improved Bismuth Vanadate Precursor Preparation for Superior Tungsten Oxide/Bismuth Vanadate Photoanode Performance in Water Oxidation and Dye Degradation Processes
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Metadata
Document Title
Ultrasonic-Improved Bismuth Vanadate Precursor Preparation for Superior Tungsten Oxide/Bismuth Vanadate Photoanode Performance in Water Oxidation and Dye Degradation Processes
Author
Nareejun W.
Name from Authors Collection
Affiliations
Department of Chemistry, Faculty of Science and Technology, Rajamangala University of Technology Thanyaburi, Khlong 6, Thanyaburi, Pathum Thai, 12120, Thailand; Spectroscopic and Sensing Devices Research Group, National Electronics and Computer Technology Center, Pathum Thani, 12120, Thailand; Advanced Photochemical and Electrochemical Materials (APEM) Research Unit, Faculty of Science and Technology, Rajamangala University of Technology Thanyaburi, Khlong 6, Thanyaburi, Pathum Thai, 12120, Thailand
Type
Article
Source Title
ES Materials and Manufacturing
ISSN
25780611
Year
2025
Volume
28
Page
1494-
Open Access
All Open Access; Bronze Open Access
Publisher
Engineered Science Publisher
DOI
10.30919/mm1494
Abstract
Photoelectrocatalytic (PEC) applications require the development of efficient fabrication methods for high-performance photoanodes. This study utilizes an automated layer-by-layer dip-coating technique to overcome the limitations of traditional manual dip-coating by incorporating ultrasonic-assisted preparation of bismuth vanadate (BiVO4) precursor solutions for fabricating tungsten oxide (WO3)/BiVO4 photoanodes. The proposed technique demonstrated excellent scalability, reproducibility, and enhanced PEC performance. Ultrasonic treatment for 120 minutes significantly increased the photocurrent density to 3 mA/cm2 under visible light, as confirmed by electrochemical impedance spectroscopy and field emission scanning electron microscopy experiments. These improvements are attributed to higher constant phase element values, lower charge transfer resistance, and greater surface roughness and porosity. The monoclinic crystalline structure of BiVO4 was confirmed by X-ray diffraction, indicating a reduced bandgap energy of 1.9 eV, in contrast to the original 2.4 eV, thereby enhancing visible light absorption. The WO3/BiVO4 photoanode eliminated 99% of organic dye in 20 minutes and showed considerable endurance over multiple cycles, indicating substantial production of hydroxyl radicals (•OH). These findings demonstrate the capacity of the method for extensive electrode fabrication and its importance for PEC applications in environmental remediation and sustainable energy conversion. ©The Author(s) 2025.
Keyword
Automatic dip-coating | Organic dye degradation | Photoelectrocatalytic performance | Ultrasonic-assisted precursor preparation | WO3/BiVO4 heterojunction
Industrial Classification
License
CC BY
Rights
Authors
Publication Source
Scopus